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r 201011a 1/12 n ??? n-channel mosfet JCS4N65B order codes ? marking ? package halogen free ? packaging device weight jcs4n65 vb-o-v-n-b jcs4n65vb ipak 0.35 g(typ) jcs4n65 rb-o-r-n-b jcs4n65 rb d pak 0.30 g(typ) jcs4n65 cb-o-c-n-b jcs4n65c b to-220c 2.15 g(typ) jcs4n65 fb-o-f-n-b jcs4n65fb t o-220mf 2.20 g(typ) ? package ? main characteristics i d 4.0 a v dss 6 5 0 v rdson @vgs=10v 2. 5 qg 13.3nc ? z ??? z z ups ? applications z high efficiency switch mode power supplies z electronic lamp ballasts based on half bridge z ups ? z ? z c rss ( ? 9pf) z ?? z ??? z ? dv/dt z rohs ? features z low gate charge z low c rss (typical 9pf ) z fast switching z 100% avalanche tested z improved dv/dt capability z rohs product ? order message no no no no tube tube tube tube
r jcs4n6 5b 201011a 2/12 ?? absolute ratings (tc=25 ) * ?? *drain current limited by maximum junction temperature ? value ? parameter symbol jcs4n65 vb/rb jcs4n65 cb jcs4n65fb uni t ???? drain-source voltage v dss 65 0 v 4.0 4.0* a ? drain current -continuous i d t=25 t=100 2.5 2.5* a ? ? 1 drain current - pulse note 1 i dm 16 16* a ??? gate-source voltage v gss 30 v ? ? 2 single pulsed avalanche energy note 2 e as 240 mj ? ? 1 avalanche current note 1 i ar 4.0 a ?? ? 1 repetitive avalanche current note 1 e ar 10.0 mj ??? ? 3 peak diode recovery dv/dt note 3 dv/dt 5.5 v/n s 51 100 33 w ? power dissipation p d t c =25 -derate above 25 0.39 0.80 0.26 w/ ??? operating and storage temperature range t j t stg -55 +150 ?? maximum lead temperature for soldering purposes t l 300
r jcs4n6 5b 201011a 3/12 electrical characteristics ? parameter symbol tests conditions min typ max units ? off ?characteristics ??? drain-source voltage bv dss i d =250 a, v gs =0v 65 0 - - v ?? breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 - 0.65 - v/ v ds =65 0v,v gs =0v, t c =25 - - 10 a ???? zero gate voltage drain current i dss v ds =50 0v, t c =125 - - 10 0 ?? gate-body leakage current, forward i gssf v ds =0v, v gs =30v - - 100 na ?? gate-body leakage current, reverse i gssr v ds =0v, v gs =-30v - - -100 na ?? on-characteristics ?? gate threshold voltage v gs(th) v ds = v gs , i d =250 a 2.0 - 4.0 v ?? static drain-source on-resistance r ds(on) v gs =10v , i d =2a - 1. 8 2.5 forward transconductance g fs v ds = 40v , i d =2a note 4 - 4.7 - s ? dynamic characteristics input capacitance c iss - 490 642 pf output capacitance c oss - 95 124 pf reverse transfer capacitance c rss v ds =25v, v gs =0v, f=1.0mh z - 9 12 pf ? a
r jcs4n6 5b 201011a 4/12 electrical characteristics switching characteristics ?? turn-on delay time t d (on) - 16 42 ns ? turn-on rise time t r - 49 111 ns ?? turn-off delay time t d (off) - 46 102 ns ?? turn-off fall time t f v dd =300v,i d =4a,r g =25 ? note 4 5 - 37 84 ns ? total gate charge q g - 13.3 19 nc ?? gate-source charge q gs - 3.6 - nc ?? gate-drain charge q gd v ds =480v , i d =4a v gs =10v note 4 5 - 4.9 - nc ????? drain-source diode characteristics and maximum ratings maximum continuous drain -source diode forward current i s - - 4 a maximum pulsed drain-source diode forward current i sm - - 16 a ? drain-source diode forward voltage v sd v gs =0v, i s =4.0a - - 1.4 v ?? reverse recovery time t rr - 330 - ns ? reverse recovery charge q rr v gs =0v, i s =4.0a di f /dt=100a/ s (note 4) - 2.67 - c thermal characteristic max ? parameter symbol jcs4n65vb /rb jcs4n65 cb jcs4n65fb unit ??? thermal resistance, junction to case r th(j-c) 2.50 1.25 3.79 /w ? thermal resistance, junction to ambient r th(j-a) 83 62.5 62.5 /w ?? 1 ? 2 l=25mh, i as =4.0a, v dd =50v, r g =25 ? , ? t j =25 3 i sd 4.0a,di/dt 200a/ s,vdd bv dss , ? t j =25 4 ? 300 s, ?? 2 5 ??? notes: 1 pulse width limited by maximum junction temperature 2 l=25mh, i as =4.0a, v dd =50v, r g =25 ? ,starting t j =25 3 i sd 4.0a,di/dt 200a/ s,vdd bv dss , starting t j =25 4 pulse test pulse width 300 s,duty cycle 2 5 essentiall y inde p endent of o p eratin g tem p erature
r jcs4n6 5b 201011a 5/12 electrical characteristics (curves) on-region characteristics transfer characteristics on-resistance variation vs. drain current and gate voltage body diode forward voltage v ariation vs. source current and temperature capacitance characteristics gate charge characteristics 246810 0.1 1 10 notes 1.250 s pulse test 2.v ds =40v 150 i d [a] v gs [v] 25 0.1 1 10 0.40.50.60.70.80.91.01.11.21.3 notes 1. 250 s pulse test 2. v gs =0v 25 150 v sd [v] i dr [a] 10 1 10 v gs top 15v 10v 8v 7v 6.5v 6v 5.5v bottom 5v notes 1. 250 s pulse test 2. t c =25 i d [a] v ds [v] 0123456 1.2 1.4 1.6 1.8 2.0 2.2 2.4 note t j =25 v gs =10v r ds (on ) [ ? ] i d [a] v gs =20v 0 2 4 6 8 10 1 2 02468101214 v ds =480v v ds =300v v ds =120v q g toltal gate charge [nc] v gs gate source voltage[v] 10 -1 10 0 10 1 0.0 2.0x10 2 4.0x10 2 6.0x10 2 8.0x10 2 c iss =c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd capacitance [pf] v ds drain-source voltage [v]
r jcs4n6 5b 201011a 6/12 electrical characteristics (curves) -75 -50 -25 0 25 50 75 100 125 150 0.90 0.95 1.00 1.05 1.10 1.15 notes 1. v g s =0v 2. i d =250 a t j [] bv dss (normalized) breakdown voltage variation vs. temperature on-resistance variation vs. temperature maximum safe operating area for jcs4n65fb maximum drain current vs. case temperature maximum safe operating area for jcs4n65 ( v /r/c ) b -75 -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes 1. v gs =10v 2. i d =2.0a r ds (on ) (normalized) t j []
r jcs4n6 5b 201011a 7/12 electrical characteristics (curves) transient thermal response curve for jcs4n65cb transient thermal response curve for jcs4n65fb transient thermal response curve for jcs4n65(v/r)b
r jcs4n6 5b 201011a 8/12 ? package mechanical data ipak unit mm
r jcs4n6 5b 201011a 9/12 ? package mechanical data dpak unit mm
r jcs4n6 5b 201011a 10/12 ? package mechanical data to-220c unit mm
r jcs4n6 5b 201011a 11/12 ? package mechanical data to-220mf unit mm
r jcs4n6 5b 201011a 12/12 ? 1. ????????? ?????? ???? 2. ????? ?? 3. ????? ?????? 4. ??? note 1. jilin sino-microelectronics co., ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. we strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please don?t be hesitate to contact us. 3. please do not exceed the absolute maximum ratings of the device when circuit designing. 4. jilin sino-microelectronics co., ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. ?? ?????? ???? 99 ?? 132013 ? 86-432-64678411 86-432-64665812 ? www.hwdz.com.cn ? ??? 99 ?? 132013 86-432-64675588 64675688 64678411-3098/3099 : 86-432-64671533 contact jilin sino-microelectronics co., ltd. add: no.99 shenzhen str eet, jilin city, jilin province, china. post code: 132013 te l 86-432-64678411 fax 86-432-64665812 web site www.hwdz.com.cn market department add: no.99 shenzhen str eet, jilin city, jilin province, china. post code: 132013 tel: 86-432-64675588 64675688 64678411-3098/3099 fax: 86-432-64671533

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